to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC1318 transistor (npn) features z low collector to emitter saturation voltage v ce(sat) z complementary pair with 2sa720 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 7 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a h fe(1) v ce =10v, i c =150ma 85 340 dc current gain h fe(2) v ce =10v, i c =500ma 40 collector-emitter saturation voltage v ce(sat) i c =300ma,i b =30ma 0.6 v base-emitter saturation voltage v be (sat) i c =300ma,i b =30ma 1.5 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 15 pf transition frequency f t v ce =10v,i c =50ma, f=200mhz 200 mhz classification of h fe(1) rank q r s range 85-170 120-240 170-340 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current 500 ma p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jun,2012
1 10 100 10 100 1000 0.1 1 10 100 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 0.1 1 10 100 10 100 110100 10 100 1000 0.1 1 10 1 10 100 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 0 4 8 12 16 20 24 0 50 100 150 200 250 500 i c f t ?? common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) 500 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 500 500 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 300 2SC1318 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 10v 30 200 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (v) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =10v static characteristic common emitter t a =25 1ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.9ma 0.2ma i b =0.1ma collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jun,2012
|
